MDRについて
ヘルプ
お問い合わせ
Switch language
日本語
English
Search MDR
Home
論文・データセット
コレクション
資源タイプ
論文(8)
口頭発表(1)
キーワード
HAXPES (9)
GaN (2)
Hf0.5Zr0.5O2 (1)
4D-STEM (1)
4f rare-earths (1)
ABF-STEM (1)
Al2O3 (1)
Band bending (1)
Chemical analysis (1)
Chemical-structures (1)
(more)
ライセンス
Creative Commons BY Attribution 4.0 International (4)
In Copyright (3)
Creative Commons BY-NC Attribution-NonCommercial 4.0 International (2)
ファイル種別
application/pdf (9)
ファイル種別: application/pdf
キーワード: HAXPES
全ての絞り込みを解除
9 件のレコードが見つかりました。
Temperature- and depth-dependent valence band electronic structures of half-metallic
Co
2
MnSi
studied by hard x-ray photoemission spectroscopy
論文
著者
Shigenori Ueda
;
Yuichi Fujita
;
Ivan Kurniawan
;
Yuya Sakuraba
;
Yoshio Miura
キーワード
Co2MnSi
,
HAXPES
,
Temperature dependence
,
Interface and bulk electronic states
,
interface and bulk magnetic properties
,
X-ray polarization dependence
刊行年月日
2026-02-18
更新時刻
2026-02-21 08:30:04 +0900
Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy
論文
著者
W. Hamouda
;
Y. Yamashita
;
S. Ueda
;
S. Matzen
;
O. Renault
;
F. Mehmood
;
T. Mikolajick
;
U. Schroeder
;
N. Barrett
キーワード
Hf0.5Zr0.5O2
,
HAXPES
,
operando
刊行年月日
2025-11-03
更新時刻
2025-11-13 12:30:12 +0900
Polarization-dependent Bulk-sensitive Valence Band Photoemission Spectroscopy and Density Functional Theory Calculations: Part IV. 4
f
Rare-earths
論文
著者
Shigenori Ueda
; Ikutaro Hamada
キーワード
HAXPES
,
4f rare-earths
,
valence band
,
core level
,
X-ray polarization
刊行年月日
2025-07-15
更新時刻
2025-06-27 12:30:24 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
論文
著者
Takahiro Nagata
;
Asahiko Matsuda
;
Takashi Teramoto
;
Dominic Gerlach
;
Peng Shen
;
Shigenori Ueda
;
Takako Kimura
;
Christian Dussarrat
;
Toyohiro Chikyow
キーワード
gallium nitride
,
GaN
,
nitrosyl fluoride
,
FNO
,
HAXPES
,
defect passivation
,
fluorination
刊行年月日
2025-03-07
更新時刻
2025-03-26 17:26:31 +0900
Direct Analysis of Stacked Au/Ti/In
2
O
3
/Al
2
O
3
/p
+
-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy
論文
著者
Ibrahima Gueye
;
Shigenori Ueda
; Atsushi Ogura ;
Takahiro Nagata
キーワード
Operando
,
HAXPES
,
Interfaces
,
In2O3
,
Al2O3
,
Band bending
,
Chemical-structures
刊行年月日
2024-05-28
更新時刻
2025-05-15 08:30:10 +0900
Chemical Interface Structures in CdS/RbInSe
2
/Cu(In,Ga)Se
2
Thin‐Film Solar Cell Stacks
論文
著者
Jakob Bombsch
;
Tim Kodalle
;
Raul Garcia‐Diez
; Claudia Hartmann ; Roberto Félix ;
Shigenori Ueda
;
Regan G. Wilks
;
Christian A. Kaufmann
;
Marcus Bär
キーワード
Thin-film solar cell stack
,
interface
,
Chemical analysis
,
hard X-ray photoemission spectroscopy
,
HAXPES
刊行年月日
2024-05-06
更新時刻
2024-08-01 16:30:13 +0900
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
論文
著者
Shunsuke Yamashita
; Sei Fukushima ;
Jun Kikkawa
; Ryoji Arai ;
Yuya Kanitani
;
Koji Kimoto
; Yoshihiro Kudo
キーワード
defect
,
GaN
,
EELS
,
4D-STEM
,
HAADF-STEM
,
ABF-STEM
,
HAXPES
刊行年月日
2024-03-01
更新時刻
2024-03-19 16:56:29 +0900
Near-interface electronic and magnetic states of insulator/Co2MnSi structures probed by hard x-ray photoemission combined with x-ray total reflection
論文
著者
Shigenori Ueda
;
Yuichi Fujita
;
Yuya Sakuraba
キーワード
insulator/Co2MnSi heterostructures
,
interface and bulk electronic and magnetic states
,
HAXPES
,
X-ray total reflection
,
SX-ARPES
刊行年月日
2024-02-07
更新時刻
2024-02-13 09:11:36 +0900
Analysis of electron inelastic scattering in solids over wide energy range and its application to surface chemical analysis
口頭発表
著者
TANUMA, Shigeo
キーワード
electron inelastic scattering
,
energy loss function
,
relativistic modified Bethe equation
,
IMFP
,
EPES
,
MED
,
HAXPES
刊行年月日
更新時刻
2023-06-29 11:43:37 +0900
キーワード
HAXPES
(9)
GaN
(2)
Hf0.5Zr0.5O2
(1)
4D-STEM
(1)
4f rare-earths
(1)
ABF-STEM
(1)
Al2O3
(1)
Band bending
(1)
Chemical analysis
(1)
Chemical-structures
(1)
Co2MnSi
(1)
EELS
(1)
EPES
(1)
FNO
(1)
HAADF-STEM
(1)
IMFP
(1)
In2O3
(1)
Interface and bulk electronic states
(1)
Interfaces
(1)
MED
(1)
Operando
(1)
SX-ARPES
(1)
Temperature dependence
(1)
Thin-film solar cell stack
(1)
X-ray polarization
(1)
X-ray polarization dependence
(1)
X-ray total reflection
(1)
core level
(1)
defect
(1)
defect passivation
(1)
electron inelastic scattering
(1)
energy loss function
(1)
fluorination
(1)
gallium nitride
(1)
hard X-ray photoemission spectroscopy
(1)
insulator/Co2MnSi heterostructures
(1)
interface
(1)
interface and bulk electronic and magnetic states
(1)
interface and bulk magnetic properties
(1)
nitrosyl fluoride
(1)
operando
(1)
relativistic modified Bethe equation
(1)
valence band
(1)
RDEメタデータ定義
RDE送り状
<
1
>