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説明:

Depth-dependent electronic and magnetic states of AlOx and MgO capped Co2MnSi thin films were measured by using hard X-ray photoemission spectroscopy (HAXPES) combined with X-ray total reflection (TR). TR-HAXPES revealed that the near-interface electronic and magnetic states of Co2MnSi films differed from those of bulk measured in non-TR condition. The decrease of the Co and Mn magnetizations near the interface along the easy magnetization axis in the bulk region relative to those in the bulk region and the changes in the valence band profiles were experimentally detected by non-destructive HAXPES utilizing TR. These results suggest that the combination of HAXPES with TR is useful to experimentally detect the electronic and magnetic states of near-interface and buried bulk regions in non-destructive way for insulator/ferromagnet heterojunctions.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

  Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

キーワード: insulator/Co2MnSi heterostructures, interface and bulk electronic and magnetic states, HAXPES, X-ray total reflection, SX-ARPES

刊行年月日: 2024-02-07

出版者: APS

掲載誌:

• PHYSICAL REVIEW B (ISSN: 24699969) vol. 109 issue. 8 085109

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1103/PhysRevB.109.085109

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更新時刻: 2024-02-13 09:11:36 +0900

MDRでの公開時刻: 2024-02-13 12:30:14 +0900