Shigenori Ueda
(Research Center for Electronic and Optical Materials/Functional Materials Field/Electro-ceramics Group, National Institute for Materials Science
)
;
Yuichi Fujita
(Global Networking Division/International Center for Young Scientists, National Institute for Materials Science
)
;
Yuya Sakuraba
(Research Center for Magnetic and Spintronic Materials/Magnetic Functional Device Group, National Institute for Materials Science
)
Description:
(abstract)Depth-dependent electronic and magnetic states of AlOx and MgO capped Co2MnSi thin films were measured by using hard X-ray photoemission spectroscopy (HAXPES) combined with X-ray total reflection (TR). TR-HAXPES revealed that the near-interface electronic and magnetic states of Co2MnSi films differed from those of bulk measured in non-TR condition. The decrease of the Co and Mn magnetizations near the interface along the easy magnetization axis in the bulk region relative to those in the bulk region and the changes in the valence band profiles were experimentally detected by non-destructive HAXPES utilizing TR. These results suggest that the combination of HAXPES with TR is useful to experimentally detect the electronic and magnetic states of near-interface and buried bulk regions in non-destructive way for insulator/ferromagnet heterojunctions.
Rights:
Keyword: insulator/Co2MnSi heterostructures, interface and bulk electronic and magnetic states, HAXPES, X-ray total reflection, SX-ARPES
Date published: 2024-02-07
Publisher: APS
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1103/PhysRevB.109.085109
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Updated at: 2024-02-13 09:11:36 +0900
Published on MDR: 2024-02-13 12:30:14 +0900
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