Download all files (4.26MB)

コレクション

引用

説明:

We used hard‑X‑ray photoelectron spectroscopy with x-ray total‑reflection and magnetic‑circular‑dichroism to study the temperature‑ and depth‑dependent valence‑band electronic and magnetic states of an AlOx-capped Co2MnSi thin film. Measurements at 20–300 K show clear temperature‑dependent changes in both bulk and near‑interface regions, but the spectral and magnetic evolutions differ between the two depths. The bulk spectra match disordered‑local‑moment calculations, underscoring spin‑fluctuation effects, while the interface exhibits enhanced spin fluctuations. This demonstrates the importance of non‑destructive, depth‑resolved probing of insulator/ferromagnet heterojunctions.

権利情報:

• In Copyright
  

  ©2026 American Physical Society

キーワード: Co2MnSi, HAXPES, Temperature dependence, Interface and bulk electronic states, interface and bulk magnetic properties, X-ray polarization dependence

刊行年月日: 2026-02-18

出版者: American Physical Society (APS)

掲載誌:

• Physical Review B (ISSN: 24699950) vol. 113 issue. 6 064430

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology JPMXP0112101001
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1122683430
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1122715503
• Japan Society for the Promotion of Science 20K05336
• Japan Society for the Promotion of Science 17H06152

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6189

公開URL: https://doi.org/10.1103/9yd3-16w6

関連資料:

その他の識別子:

連絡先:

更新時刻: 2026-02-21 08:30:04 +0900

MDRでの公開時刻: 2026-02-20 17:56:41 +0900