Temperature- and depth-dependent valence band electronic structures of half-metallic
                    <math>
                      <mrow>
                        <msub>
                          <mi>Co</mi>
                          <mn>2</mn>
                        </msub>
                        <mi>MnSi</mi>
                      </mrow>
                    </math>
                    studied by hard x-ray photoemission spectroscopy

Shigenori Ueda; Yuichi Fujita; Ivan Kurniawan; Yuya Sakuraba; Yoshio Miura

doi:10.1103/9yd3-16w6

Article Temperature- and depth-dependent valence band electronic structures of half-metallic

{Co}_{2} MnSi

studied by hard x-ray photoemission spectroscopy

Shigenori Ueda ; Yuichi Fujita ; Ivan Kurniawan ; Yuya Sakuraba ; Yoshio Miura

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Shigenori Ueda, Yuichi Fujita, Ivan Kurniawan, Yuya Sakuraba, Yoshio Miura. Temperature- and depth-dependent valence band electronic structures of half-metallic

{Co}_{2} MnSi

studied by hard x-ray photoemission spectroscopy. Physical Review B. 2026, 113 (6), 064430. https://doi.org/10.1103/9yd3-16w6

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(abstract)

We used hard‑X‑ray photoelectron spectroscopy with x-ray total‑reflection and magnetic‑circular‑dichroism to study the temperature‑ and depth‑dependent valence‑band electronic and magnetic states of an AlOx-capped Co2MnSi thin film. Measurements at 20–300 K show clear temperature‑dependent changes in both bulk and near‑interface regions, but the spectral and magnetic evolutions differ between the two depths. The bulk spectra match disordered‑local‑moment calculations, underscoring spin‑fluctuation effects, while the interface exhibits enhanced spin fluctuations. This demonstrates the importance of non‑destructive, depth‑resolved probing of insulator/ferromagnet heterojunctions.

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©2026 American Physical Society

Keyword: Co2MnSi, HAXPES, Temperature dependence, Interface and bulk electronic states, interface and bulk magnetic properties, X-ray polarization dependence

Date published: 2026-02-18

Publisher: American Physical Society (APS)

Journal:

Physical Review B (ISSN: 24699950) vol. 113 issue. 6 064430

Funding:

Ministry of Education, Culture, Sports, Science and Technology JPMXP0112101001
Ministry of Education, Culture, Sports, Science and Technology JPMXP1122683430
Ministry of Education, Culture, Sports, Science and Technology JPMXP1122715503
Japan Society for the Promotion of Science 20K05336
Japan Society for the Promotion of Science 17H06152

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6189

First published URL: https://doi.org/10.1103/9yd3-16w6

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Updated at: 2026-02-21 08:30:04 +0900

Published on MDR: 2026-02-20 17:56:41 +0900

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