Electrical and UV-sensing performance of N-doped-Ba(Ti,Zr,Mo,Hf,Ta)O3-dielectric and ZnSnO-channel-based flexible thin-film transistors
- ジャーナル論文
- 著者
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;Van Dung Nguyen (author) (この著者で検索)Takahiro Nagata (author) (この著者で検索)
;
;Huu Duc Luong (author) (この著者で検索)K.-S. Chang (author) (この著者で検索)
https://orcid.org/0000-0002-2876-9255
(unauthenticated)
- キーワード
- thin-film transistors, N-doped-Ba(Ti,Zr,Mo,Hf,Ta)O3 dielectric, ZnSnO channel, flexibility, UV detector
- 刊行年月日
- 2024-10-19
- 更新時刻
- 2024-11-26 09:23:59 +0900
Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway
- ジャーナル論文
- 著者
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Yuhao Shi (author) (この著者で検索)
https://orcid.org/0000-0002-7956-193X
(unauthenticated)
;
Masatake Tsuji (author) (この著者で検索)
https://orcid.org/0000-0002-3404-6037
(unauthenticated)
;
Hanjun Cho (author) (この著者で検索)
https://orcid.org/0009-0009-2834-8846
(unauthenticated)
;
Shigenori Ueda (author) (この著者で検索)National Institute for Materials Science
;
Junghwan Kim (author) (この著者で検索)
https://orcid.org/0000-0001-9168-6260
(unauthenticated)
;
Hideo Hosono (author) (この著者で検索)National Institute for Materials Science
- キーワード
- oxide semiconductors, IGZO, thin-film transistors, contact resistance, palladium, hydrogen
- 刊行年月日
- 2024-04-02
- 更新時刻
- 2024-04-08 16:30:22 +0900