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Flexible thin-film transistors (TFTs) based on N-doped Ba(Ti,Zr,Mo,Hf,Ta)O3 dielectric and ZnSnO channel show high electrical and UV-sensing performance. The optimal N-doped Ba(Ti,Zr,Mo,Hf,Ta)O3 compositions with low equivalent oxide thicknesses and high-entropy are efficiently determined from a wide composition space. The film library is patterned to 450 metal–insulator-metal stacks, revealing dielectric constants ≈ 262–322 and loss (tan δ) ≈ 0.01–0.30 for the N-doped Ba(Ti,Zr,Mo,Hf,Ta)O3 at 1 kHz. The library is further integrated to 63 TFTs, and the promising ones exhibit the remarkable parameters: current on/off ratio of 108, threshold voltage (VT) of 0.02 V, saturation field-effect mobility of ≈76 cm2⋅V−1⋅s−1, and subthreshold swing of 0.062 V dec−1. Furthermore, the TFT-based ultraviolet (253 nm) detector demonstrates impressive sensitivity (≈ 2 × 106) and responsibility (≈ 1171.9 A W−1). There is no substantial degradation in electrical or sensing characteristics under various levels of deformation. Charge transport in constructed energy band diagrams is used to elucidate the observed remarkable performance.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: thin-film transistors, N-doped-Ba(Ti,Zr,Mo,Hf,Ta)O3 dielectric, ZnSnO channel, flexibility, UV detector

刊行年月日: 2024-10-19

出版者: Elsevier BV

掲載誌:

• Applied Surface Science (ISSN: 01694332) vol. 681 161568

研究助成金:

• National Science and Technology Council MOST 112-2224-E-006-003
• National Science and Technology Council MOST 111-2224-E-006-005

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5031

公開URL: https://doi.org/10.1016/j.apsusc.2024.161568

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更新時刻: 2024-11-26 09:23:59 +0900

MDRでの公開時刻: 2026-10-19 08:30:57 +0900