7 records found.
Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 μm
- Journal article
- Creator
-
Neul Ha (author) (Search by this author)National Institute for Materials Science
;
Takaaki Mano (author) (Search by this author)National Institute for Materials Science
;
;Samuel Dubos (author) (Search by this author)Takashi Kuroda (author) (Search by this author)National Institute for Materials Science
;
Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
;
Kazuaki Sakoda (author) (Search by this author)National Institute for Materials Science
- Keyword
- InAs, Quantum Dot, Droplet Epitaxy, Single photon, (111)A, Fine Structure Splitting, Telecommunication
- Date published
- 2020-02-01
- Updated at
- 2025-12-06 12:30:07 +0900
Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A
- Journal article
- Creator
-
;Neul Ha (author) (Search by this author);Xiangming Liu (author) (Search by this author)Takaaki Mano (author) (Search by this author)
;
Takashi Kuroda (author) (Search by this author)
;
Kazutaka Mitsuishi (author) (Search by this author)
;
;Andrea Castellano (author) (Search by this author);Stefano Sanguinetti (author) (Search by this author)Takeshi Noda (author) (Search by this author)
;
Yoshiki Sakuma (author) (Search by this author)
;
Kazuaki Sakoda (author) (Search by this author)
- Keyword
- InAs, Quantum Dot, Droplet Epitaxy, Entanglement, (111)A, Fine Structure Splitting, Telecommunication
- Date published
- 2014-04-07
- Updated at
- 2025-12-06 12:30:12 +0900
液滴エピタキシー法による量子ドットの作製技術
- Book
- Creator
-
間野 高明 (author) (Search by this author)電子・光機能材料研究センター/光学材料分野/半導体エピタキシャル構造グループ, 物質・材料研究機構
;
大竹 晃浩 (author) (Search by this author)電子・光機能材料研究センター/光学材料分野/半導体エピタキシャル構造グループ, 物質・材料研究機構
- Keyword
- 液滴エピタキシー, GaAs, InAs, 量子ドット, 量子光源
- Date published
- [2025年9月]
- Updated at
- 2025-10-21 16:06:39 +0900
Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots
- Journal article
- Creator
-
Takaaki Mano (author) (Search by this author)
;
Akihiro Ohtake (author) (Search by this author)
;
Takashi Kuroda (author) (Search by this author)
- Keyword
- GaAs, InAs, (111)A, metamorphic, Quantum dot, Molecular beam epitaxy
- Date published
- 2024-01-10
- Updated at
- 2024-07-12 16:30:19 +0900
Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers
- Journal article
- Creator
-
Akihiro Ohtake (author) (Search by this author)
;
Takaaki Mano (author) (Search by this author)
- Keyword
- InSb, InAs, GaAs, Metamorphic, Molecular beam epitaxy
- Date published
- 2024-03-01
- Updated at
- 2024-02-13 11:12:35 +0900
.thumb.png)
XAFS spectrum of Indium arsenide
- Dataset
- Collection
- MDR XAFS DB
- Creator
-
Masashi Ishii (editor) (Search by this author)National Institute for Materials Science
;
Industrial Application and Partnership Division (author) (Search by this author)Japan Synchrotron Radiation Research Institute
- Keyword
- collection - MDR XAFS DB, XAFS, SPring-8, BL14B2, Si(311), InAs (metal base), In K-edge, Alloy, Indium arsenide, Metalloid alloy, InAs
- Date published
- 2021-07-24
- Updated at
- 2025-05-02 21:42:14 +0900
.thumb.png)
XAFS spectrum of Indium arsenide
- Dataset
- Collection
- MDR XAFS DB
- Creator
-
Masashi Ishii (editor) (Search by this author)National Institute for Materials Science
;
Industrial Application and Partnership Division (author) (Search by this author)Japan Synchrotron Radiation Research Institute
- Keyword
- collection - MDR XAFS DB, XAFS, SPring-8, BL14B2, Si(111), InAs (metal base), In K-edge, Alloy, Indium arsenide, Metalloid alloy, InAs
- Date published
- 2021-07-21
- Updated at
- 2025-05-02 21:36:43 +0900