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説明:

This paper reviews recent developments in the lattice-mismatched epitaxy of InAs on (111)A-oriented substrates and related research topics, in which the presence or absence of the misfit dislocations is controlled via prescribed growth sequences.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: GaAs, InAs, (111)A, metamorphic, Quantum dot, Molecular beam epitaxy

刊行年月日: 2024-01-10

出版者: Wiley

掲載誌:

• physica status solidi (a) (ISSN: 18626300) vol. 221 issue. 13

研究助成金:

• 防衛装備庁 JPJ004596 (安全保障技術研究推進制度)

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/pssa.202300767

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更新時刻: 2024-07-12 16:30:19 +0900

MDRでの公開時刻: 2024-07-12 16:30:19 +0900