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Description:

This paper reviews recent developments in the lattice-mismatched epitaxy of InAs on (111)A-oriented substrates and related research topics, in which the presence or absence of the misfit dislocations is controlled via prescribed growth sequences.

Rights:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

Keyword: GaAs, InAs, (111)A, metamorphic, Quantum dot, Molecular beam epitaxy

Date published: 2024-01-10

Publisher: Wiley

Journal:

• physica status solidi (a) (ISSN: 18626300) vol. 221 issue. 13

Funding:

• 防衛装備庁 JPJ004596 (安全保障技術研究推進制度)

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/pssa.202300767

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Updated at: 2024-07-12 16:30:19 +0900

Published on MDR: 2024-07-12 16:30:19 +0900