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Molecular-beam epitaxy of InSb on the (111)A-oriented GaAs substrates has been studied using electron diffraction, x-ray diffraction, and scanning probe microscopy. The direct growth of InSb on GaAs(111)A results in a cracked morphology with flat terraces and deep gaps, which could be attributed to the extremely large lattice mismatch between InSb and GaAs (14.6 %). When thin (5 – 30 monolayer thickness) InAs films are used as interlayers, more continuous and flat InSb films are obtained.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: InSb, InAs, GaAs, Metamorphic, Molecular beam epitaxy

刊行年月日: 2024-03-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 63 issue. 3
• JAPANESE JOURNAL OF APPLIED PHYSICS (ISSN: 13474065) vol. 63 issue. 3

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.35848/1347-4065/ad2032

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更新時刻: 2024-02-13 11:12:35 +0900

MDRでの公開時刻: 2024-02-13 12:30:18 +0900