27 records found.
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
- Journal article
- Creator
-
Yoshihiro Irokawa (author) (Search by this author)
;
Mamoru Usami (author) (Search by this author)
https://orcid.org/0009-0002-3188-7380
(unauthenticated)
;
Jun Uzuhashi (author) (Search by this author)
;
Tadakatsu Ohkubo (author) (Search by this author)
;
Toshihide Nabatame (author) (Search by this author)
;
Yasuo Koide (author) (Search by this author)
- Keyword
- GaN
- Date published
- 2026-05-01
- Updated at
- 2026-05-13 10:14:20 +0900
Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam
- Journal article
- Creator
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Akira Uedono (author) (Search by this author)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Shoji Ishibashi (author) (Search by this author)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kohei Shima (author) (Search by this author)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
;Shigefusa F. Chichibu (author) (Search by this author)Kacper Sierakowski (author) (Search by this author)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Makoto Oishi (author) (Search by this author)
https://orcid.org/0000-0003-3402-4556
(unauthenticated)
;
Noriyuki Okada (author) (Search by this author)
https://orcid.org/0009-0002-0090-5646
(unauthenticated)
;
Takuro Nagai (author) (Search by this author)
;
Michal Bockowski (author) (Search by this author)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- Keyword
- Mechanical polishing, GaN, Vacancy, Defect, Positron annihilation
- Date published
- 2026-04-12
- Updated at
- 2026-04-20 08:56:29 +0900
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- Journal article
- Creator
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Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
;
Takaaki Mano (author) (Search by this author)National Institute for Materials Science
;
;Yuri Itokazu (author) (Search by this author)Masafumi Jo (author) (Search by this author)
- Keyword
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- Date published
- 2026-03-21
- Updated at
- 2026-04-03 09:31:08 +0900
Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach
- Journal article
- Creator
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Zhendong Wu (author) (Search by this author)
https://orcid.org/0000-0002-9882-4133
(unauthenticated)
;
Tetsuya Tohei (author) (Search by this author)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (Search by this author)
;
;Shigeyoshi Usami (author) (Search by this author);Masayuki Imanishi (author) (Search by this author);Yusuke Mori (author) (Search by this author);Junichi Takino (author) (Search by this author);Kazushi Sumitani (author) (Search by this author)Yasuhiko Imai (author) (Search by this author)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
Shigeru Kimura (author) (Search by this author)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Akira Sakai (author) (Search by this author)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- Keyword
- GaN, nanoXRD, ML
- Date published
- 2026-02-15
- Updated at
- 2026-02-26 12:30:06 +0900
First-principles lattice thermal conductivity calculation for GaN / P6_3mc (186) / materials id 804
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
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Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, GaN
- Date published
- Updated at
- 2026-01-24 15:02:16 +0900
First-principles lattice thermal conductivity calculation for GaN / F-43m (216) / materials id 830
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
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Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, GaN
- Date published
- Updated at
- 2026-01-24 12:32:02 +0900
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- Journal article
- Creator
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;Akihiro Shimada (author) (Search by this author);Haruna Shiomi (author) (Search by this author)Tetsuya Tohei (author) (Search by this author)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (Search by this author)
;
;Masaya Yamaguchi (author) (Search by this author)Junpei Yamamoto (author) (Search by this author)
https://orcid.org/0009-0007-5684-0569
(unauthenticated)
;
Takeaki Hamachi (author) (Search by this author)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
Yasuhiko Imai (author) (Search by this author)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
;Kazushi Sumitani (author) (Search by this author)Shigeru Kimura (author) (Search by this author)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Shota Kaneki (author) (Search by this author)
https://orcid.org/0000-0003-0806-8571
(unauthenticated)
;
Tamotsu Hashizume (author) (Search by this author)
https://orcid.org/0009-0004-8229-9460
(unauthenticated)
;
Akira Sakai (author) (Search by this author)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- Keyword
- GaN, HEMT, Strain, In situ
- Date published
- 2025-08-21
- Updated at
- 2025-08-23 08:30:23 +0900
Reducing vertex radius of curvature for 100 nm size square and triangular holes in GaN by shape modification
- Journal article
- Creator
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;Kohei Tuzuku (author) (Search by this author)Masataka Imura (author) (Search by this author)
;
Hironori Okumura (author) (Search by this author)
https://orcid.org/0000-0002-5464-9169
(unauthenticated)
- Keyword
- GaN, EB lithography
- Date published
- 2025-06-01
- Updated at
- 2025-12-26 10:20:58 +0900
Machine learning assisted nanobeam X-ray diffraction based analysis on hydride vapor-phase epitaxy GaN
- Journal article
- Creator
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;Zhendong Wu (author) (Search by this author)Yusuke Hayashi (author) (Search by this author)National Institute for Materials Science
;
;Tetsuya Tohei (author) (Search by this author);Kazushi Sumitani (author) (Search by this author);Yasuhiko Imai (author) (Search by this author);Shigeru Kimura (author) (Search by this author)Akira Sakai (author) (Search by this author)
- Keyword
- GaN, SPring-8, nanoXRD, Machine learning
- Date published
- 2025-08-01
- Updated at
- 2025-07-31 12:30:18 +0900
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- Journal article
- Creator
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Masahiro Hara (author) (Search by this author)
https://orcid.org/0000-0001-9748-8011
(unauthenticated)
;
Toshihide Nabatame (author) (Search by this author)
;
Yoshihiro Irokawa (author) (Search by this author)
;
;Tomomi Sawada (author) (Search by this author);Manami Miyamoto (author) (Search by this author);Hiromi Miura (author) (Search by this author);Tsunenobu Kimoto (author) (Search by this author)Yasuo Koide (author) (Search by this author)
- Keyword
- GaN
- Date published
- 2025-05-07
- Updated at
- 2025-05-08 12:30:16 +0900