3 件のレコードが見つかりました。
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
- キーワード
- Ga2O3, (-102), selective area growth, selective area etching
- 刊行年月日
- 2024-01-22
- 更新時刻
- 2025-01-25 12:30:12 +0900
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, selective area growth
- 刊行年月日
- 2022-07-01
- 更新時刻
- 2024-01-05 22:13:27 +0900