キーワード: GaN
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27 件のレコードが見つかりました。

Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
ジャーナル論文
著者
色川 芳宏 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
大井 暁彦 (author) (この著者で検索)
National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
ORCID SAMURAI ;
生田目 俊秀 (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
ORCID SAMURAI ;
小出 康夫 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI
キーワード
GaN, hydrogen, Schottky barrier height
刊行年月日
2024-04-01
更新時刻
2024-04-10 16:30:21 +0900
031101_1_5.0178995.pdf
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
ジャーナル論文
著者
Shunsuke Yamashita (author) (この著者で検索)
ORCID ;
Sei Fukushima (author) (この著者で検索)
;
Jun Kikkawa (author) (この著者で検索)
National Institute for Materials Science (NIMS) Center for Basic Research on Materials
ORCID SAMURAI ;
Ryoji Arai (author) (この著者で検索)
;
Yuya Kanitani (author) (この著者で検索)
ORCID ;
Koji Kimoto (author) (この著者で検索)
National Institute for Materials Science (NIMS) Center for Basic Research on Materials
ORCID SAMURAI ;
Yoshihiro Kudo (author) (この著者で検索)
キーワード
defect, GaN, EELS, 4D-STEM, HAADF-STEM, ABF-STEM, HAXPES
刊行年月日
2024-03-01
更新時刻
2024-03-19 16:56:29 +0900
band_structure.png
Ab-initio phonon calculation for GaN / F-43m (216) / materials id 830
データセット
コレクション
MDR phonon calculation database
著者
Atsushi Togo (author) (この著者で検索)
National Institute for Materials Science MaDIS
ORCID SAMURAI
キーワード
Phonon, GaN, F-43m (216)
刊行年月日
更新時刻
2023-05-14 19:05:25 +0900
band_structure.png
Ab-initio phonon calculation for GaN / P6_3mc (186) / materials id 804
データセット
コレクション
MDR phonon calculation database
著者
Atsushi Togo (author) (この著者で検索)
National Institute for Materials Science MaDIS
ORCID SAMURAI
キーワード
Phonon, GaN, P6_3mc (186)
刊行年月日
更新時刻
2023-05-14 19:03:39 +0900
GaN_H2O.jpg
Continuous real-time O 1s core XPS spectra of H2O adsorption on +c Ga-face and m-plane surfaces of GaN
データセット
著者
SUMIYA, Masatomo (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
GaN, Gallium nitride, Surface oxidation, Oxidation, MOS structure, XPS, SPring-8
刊行年月日
2022-12-31
更新時刻
2024-01-05 22:11:14 +0900
GaN_O2.jpg
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
データセット
著者
SUMIYA, Masatomo (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
GaN, Gallium nitride, Oxidation, Adsorption, XPS, SPring-8
刊行年月日
2020-11-19
更新時刻
2024-01-05 22:13:22 +0900
[Vol. 68]New GaN MEMS Resonator Is Temperature-Stable up to 600 K_ WPI-MANA.pdf
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
雑誌
コレクション
Research Highlights
著者
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)
National Institute for Materials Science
キーワード
GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
刊行年月日
2021-07-13
更新時刻
2023-12-26 21:38:08 +0900