3 records found.
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
- Keyword
- Ga2O3, (-102), selective area growth, selective area etching
- Date published
- 2024-01-22
- Updated at
- 2025-01-25 12:30:12 +0900
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, selective area growth
- Date published
- 2022-07-01
- Updated at
- 2024-01-05 22:13:27 +0900
Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate
- Journal article
- Creator
-
;Hitoshi Takane (author) (Search by this author)Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Katsuhisa Tanaka (author) (Search by this author)Kentaro Kaneko (author) (Search by this author)
- Keyword
- SnO2, selective area growth
- Date published
- 2023-04-01
- Updated at
- 2024-04-14 08:30:12 +0900