Article Materials issues and devices of α- and β-Ga2O3

Elaheh Ahmadi ; Yuichi Oshima SAMURAI ORCID (National Institute for Materials Science)

Materials issues and devices of α- and β-Ga2O3.pdf
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Elaheh Ahmadi, Yuichi Oshima. Materials issues and devices of α- and β-Ga2O3. JOURNAL OF APPLIED PHYSICS. 2019, 126 (16), 160901-160901. https://doi.org/10.1063/1.5123213
SAMURAI

Alternative title: パワーデバイスに向けたα- および β- Ga2O3の開発

Description:

(abstract)

パワーデバイスに向けたα-　および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。

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  • In Copyright

    This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Elaheh Ahmadi et al., J. Appl. Phys. 126, 160901 (2019) and may be found at https://doi.org/10.1063/1.5123213.

Keyword: Ga2O3, power device, epitaxy

Date published: 2019-10-28

Publisher: AIP Publishing

Journal:

  • JOURNAL OF APPLIED PHYSICS (ISSN: 00218979) vol. 126 issue. 16 p. 160901-160901

Funding:

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/1.5123213

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Updated at: 2024-01-29 15:08:11 +0900

Published on MDR: 2024-01-29 16:30:09 +0900

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