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The precise characterization of bulk properties of thin homoepitaxial diamond layers with micrometer thickness is difficult due to the interference from the substrate. In this work, we utilized smart-cut method to fabricate single-crystal diamond (SCD) cantilevers or plates and transferred them to a foreign substrate (SiO2/Si). The mechanical resonance of the SCD cantilevers was characterized to confirm that the ion-implantation-induced damaged layer was nearly removed under the cantilever. Raman, photoluminescence (PL), and cathodoluminescence (CL) measurements were conducted on the transferred SCD cantilevers/plates and homoepitaxial layers on the substrate with and without ion implantation. As a result, it was found that both of the Raman spectral properties of the SCD layer on the ion-implanted regions and the freestanding SCD plates/cantilevers successfully avoid interference from the substrate. PL analysis showed no emission peaks attributable to nitrogen and other defects from the epilayers. Additionally, CL analysis from the freestanding cantilevers/plates disclosed the exciton emission at around 236 nm at room temperature. These results suggest the high crystal quality of the SCD cantilevers for MEMS applications.

権利情報:

• Creative Commons BY-NC Attribution-NonCommercial 4.0 International
  

キーワード: Diamond, MEMS

刊行年月日: 2025-12-31

出版者: Informa UK Limited

掲載誌:

• Functional Diamond (ISSN: 26941112) vol. 5 issue. 1 2570362

研究助成金:

• JSPS KAKENHI 24KF0085
• JSPS KAKENHI 24H00287
• JSPS KAKENHI 22K18957
• Advanced Research Infrastructure for Materials and Nanotechnology in Japan (ARIM) of MEXT JPMXP1224NM5055
• China Scholarship Council 202306890007

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5828

公開URL: https://doi.org/10.1080/26941112.2025.2570362

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更新時刻: 2025-10-28 12:30:30 +0900

MDRでの公開時刻: 2025-10-28 12:16:22 +0900