Keyun Gu
;
Zilong Zhang
;
Zhaozong Zhang
;
Jian Huang
;
Yasuo Koide
;
Satoshi Koizumi
;
Meiyong Liao
Description:
(abstract)The precise characterization of bulk properties of thin homoepitaxial diamond layers with micrometer thickness is difficult due to the interference from the substrate. In this work, we utilized smart-cut method to fabricate single-crystal diamond (SCD) cantilevers or plates and transferred them to a foreign substrate (SiO2/Si). The mechanical resonance of the SCD cantilevers was characterized to confirm that the ion-implantation-induced damaged layer was nearly removed under the cantilever. Raman, photoluminescence (PL), and cathodoluminescence (CL) measurements were conducted on the transferred SCD cantilevers/plates and homoepitaxial layers on the substrate with and without ion implantation. As a result, it was found that both of the Raman spectral properties of the SCD layer on the ion-implanted regions and the freestanding SCD plates/cantilevers successfully avoid interference from the substrate. PL analysis showed no emission peaks attributable to nitrogen and other defects from the epilayers. Additionally, CL analysis from the freestanding cantilevers/plates disclosed the exciton emission at around 236 nm at room temperature. These results suggest the high crystal quality of the SCD cantilevers for MEMS applications.
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Date published: 2025-12-31
Publisher: Informa UK Limited
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Funding:
Manuscript type: Author's version (Submitted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5828
First published URL: https://doi.org/10.1080/26941112.2025.2570362
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Updated at: 2025-10-28 12:30:30 +0900
Published on MDR: 2025-10-28 12:16:22 +0900
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4.29 Characterization of diamond MEMS cantilevers mitigating substrate interference effects _Liao.docx
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