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We uncover the electronic origin of hidden interfacial doping in monolayer MoS2 single　crystal wafers grown on sapphire by metal–organic chemical vapor deposition (MOCVD) and establish a transfer-free top-gate device platform. Despite structural perfection, as-fabricated devices exhibit degenerate electron doping and lack a clear off state. Hall measurements quantify an interfacial electron density of 2.7×1012 cm−2, evidencing substantial charge transfer across the nominal van der Waals interface. Interface-sensitive spectroscopy, lateral force microscopy, and thermal desorption analysis reveal a buried sulfate-derived layer accompanied by a water-like interfacial structure that acts as an intrinsic electron donor. A purely dry H2/Ar annealing process selectively removes these species, suppressing charge transfer and restoring intrinsic FET characteristics without transfer or wet processing. Through this dry interface engineering approach, we demonstrate MOCVD-grown single-crystal MoS2 wafers as a robust, transfer-free platform for the reliable evaluation of intrinsic gate stacks and device performance.

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• Creative Commons BY-NC Attribution-NonCommercial 4.0 International
  

Keyword: MOCVD-grownMoS2wafers, interfacialchargetransfer, transfer-freedevicefabrication, top-gatefield-effecttransistors, wafer-scale2Dsemiconductors

Date published: 2026-07-05

Publisher: Wiley

Journal:

• Advanced Materials (ISSN: 09359648) e73931

Funding:

• JST JPMJCR24A3 (CREST: funding program for team-oriented research with the aim of achieving the strategic goals set forth by the government.)
• JST JPMJES2531 (JST-Research and Devel-opment Programfor Next-generation Edge AI Semiconductors)
• JST JPMJMI22708192 (JST-Mirai: funding program for high-risk but high-return R&D that leads to social and economic impact.)

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/adma.73931

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Updated at: 2026-07-29 09:15:47 +0900

Published on MDR: 2026-07-29 10:28:02 +0900