@article{li,
  title = {MOCVD‐Grown MoS
                    <sub>2</sub>
                    Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering},
  author = {Shuhong Li, Juiteng Chang, Keisuke Atsumi, Kosei Matsumoto, Itsuki Tanaka, Tomonori Nishimura, Kaito Kanahashi, Takahiro Nagata, Jun Nara, Yoshiki Sakuma, Emi Kano, Nobuyuki Ikarashi, Kosuke Nagashio},
  publisher = {Wiley},
  year = {2026},
  keywords = {MOCVD-grownMoS2wafers, interfacialchargetransfer, transfer-freedevicefabrication, top-gatefield-effecttransistors, wafer-scale2Dsemiconductors}
}