Index Catalog // MDR

Description/Abstract:: This dataset consists of HAXPES spectra at n-type Si sub Sputtered measured at SPring-8 BL46XU, and is a part of HAXPES database (MDR HAX...
Keyword:: BL46XU, HAXPES, SPring-8, collection - MDR HAXPES DB, and n-type Si sub Sputtered
Material/Specimen:: n-type Si sub Sputtered
Resource Type:: Dataset
Data origin:: experiments
Contact person:: Industrial Application and Partnership Division, JASRI
Date Uploaded:: 18/01/2022

Description/Abstract:: We have determined electron inelastic mean free paths (IMFPs) in C (graphite), Si, Cr, Fe, Cu, Zn, Ga, Mo, Ag, Ta, W, Pt and Au by elasti...
Keyword:: electron inelastic mean free paths, experimental determination, elastic- peak electron spectroscopy, and Monte Carlo simulation
Material/Specimen:: C (graphite), Si, Cr, Fe, Cu, Zn, Ga, Mo, Ag, Ta, W, Pt and Au
Resource Type:: Article
Author:: Tanuma, Shigeo, Shiratori, T, Kimura, Takashi, Goto, Keisuke, Ichimura, Shingo, and Powell, Cedric J
Journal:: SURFACE AND INTERFACE ANALYSIS
Date Uploaded:: 04/10/2021
Date Modified:: 18/10/2021

Description/Abstract:: We developed a 85°-high-angle inclined specimen holder which enabled the specimen surface to be irradiated by both electron and ion beams...
Keyword:: Auger Depth Profiling Analysis, Inclined Holder, GaAs/AlAs Superlattice, and Si/Ge multiple delta-doped layers
Material/Specimen:: GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Nagatomi, Takaharu, Kim, Kyung Joong, and Tanuma, Shigeo
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 08/09/2021
Date Modified:: 08/09/2021

Description/Abstract:: 試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析について検討を行った．分析時の試料保持温度を常温および-190℃として，それぞれの温度について電子線電流密度を３段階に変えてデプスプロファイルを取得した．イオン加速電圧は3kVである．また，測定したオー...
Keyword:: Auger Depth Profiling Analysis, Sample Cooling Method, and SiO2/Si
Material/Specimen:: SiO2:103nm/Si-Substrate
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 26/07/2021
Date Modified:: 26/07/2021

Description/Abstract:: 半球型電子分光器を搭載したオージェ電子分光装置では，傾斜ホルダーを用いると装置のジオメトリー特性との関係からイオン及び一次電子の入射角の自由度が大きくなる.特に試料回転の回転軸が一次電子の入射方向と一致する場合は，傾斜ホルダーの回転角によってイオン入射角を設定でき，電...
Keyword:: Auger Depth Profiling Analysis, Inclined Holder, GaAs/AlAs Superlattice, and Si/Ge multiple delta-doped layers
Material/Specimen:: GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Nagatomi, Takaharu, Kim, Kyung Joong, and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 14/06/2021
Date Modified:: 18/06/2021

Description/Abstract:: <h4>Abstract</h4> We have calculated inelastic mean free paths (IMFPs) for 41 elemental solids (Li, Be, graphite, diamond, glassy C, Na,...
Keyword:: electron inelastic mean free path, inelastic mean free paths, predictive equation for IMFP, elemental solid, relativistic Bethe equation, Fano plot, IMFP, ELF, energy loss function, optical constant, relativistic full Penn algorithm, full Penn algorithm, FPA, TPP-2M, and relativistic TPP-2M
Material/Specimen:: 41 elemental solids (Li, Be, graphite, diamond, glassy C, Na, Mg, Al, Si, K, Sc, Ti, V, Cr, Fe, Co, Ni, Cu, Ge, Y, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Cs, Gd, Tb, Dy, Hf, Ta, W, Re, Os, Ir, Pt, Au, and Bi)
Resource Type:: Article
Author:: Shinotsuka, Hiroshi, TANUMA, Shigeo, Powell, Cedric J., and Penn, David R.
Journal:: Surface and Interface Analysis
Date Uploaded:: 01/04/2021
Date Modified:: 19/07/2021

Limit your search