Index Catalog // MDR

Description/Abstract:: GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...
Keyword:: atom probe tomography, gallium nitride, and transmission electron microscopy
Resource Type:: ProceedingsArticle
Author:: Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, and Masaharu Edo
Date Uploaded:: 19/04/2024

Description/Abstract:: Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into ...
Keyword:: gallium nitride, positron, and vacancy
Resource Type:: Article
Author:: Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, and Tetsu Kachi
Journal:: Proceedings of SPIE - The International Society for Optical Engineering
Date Uploaded:: 04/10/2023
Date Modified:: 04/10/2023

Description/Abstract:: We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...
Keyword:: atom probe tomography, gallium nitride, and transmission electron microscopy
Resource Type:: Article
Author:: Emi Kano, Keita Kataoka, Jun Uzuhashi, Kenta Chokawa, Hideki Sakurai, Akira Uedono, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Ritsuo Otsuki, Koki Kobayashi, Yuta Itoh, Masahiro Nagao, Tadakatsu Ohkubo, Kazuhiro Hono, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 28/09/2023
Date Modified:: 28/09/2023

Description/Abstract:: Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type dopin...
Keyword:: activation, gallium nitride, scanning transmission electron microscopy, and semiconductor
Resource Type:: Article
Author:: Ashutosh Kumar, Martin Berg, Qin Wang, Jun Uzuhashi, Tadakatsu Ohkubo, Michael Salter, and Peter Ramvall
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 28/09/2023
Date Modified:: 28/09/2023

Description/Abstract:: An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:: atom probe tomography, cathodoluminescence, gallium nitride, implantation, and scanning transmission electron microscopy
Resource Type:: Article
Author:: Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 04/07/2023

Limit your search