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Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>
Description/Abstract:
We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 st...
Keyword:
ELO
,
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Shingo Yagyu
, and
Takashi Shinohe
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
We demonstrated epitaxial lateral overgrowth of a-Ga2O3 by halide vapor phase epitaxy. We formed stripe patterned or triangular lattice d...
Keyword:
ELO
,
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Y. Oshima
,
K. Kawara
,
T. Shinohe
,
T. Hitora
,
M. Kasu
, and
S. Fujita
Journal:
APL MATERIALS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
Description/Abstract:
Threading dislocations in a heteroepitaxial α-Ga2O3 film was visualized as etch pits on the surface. We found that etch pits were formed ...
Keyword:
dislocation
,
etching
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Shingo Yagyu
, and
Takashi Shinohe
Journal:
JOURNAL OF CRYSTAL GROWTH
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
Description/Abstract:
We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...
Keyword:
ELO
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Katsuaki Kawara
,
Yuichi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
Applied Physics Express
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells
Description/Abstract:
The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out usin...
Keyword:
InGaN
,
atom probe tomography
,
dislocation
,
pipe diffusion
, and
transmission electron microscopy
Resource Type:
Article
Author:
Yudai Yamaguchi
,
Yuya Kanitani
,
Yoshihiro Kudo
,
Jun Uzuhashi
,
Tadakatsu Ohkubo
,
Kazuhiro Hono
, and
Shigetaka Tomiya
Journal:
NANO LETTERS
Date Uploaded:
04/10/2023
Date Modified:
04/10/2023
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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3
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