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オージェ電子分光法における背面散乱補正　I．広い分析条件で使用可能な電子の背面散乱補正式の開発

Description/Abstract:

AESによる表面定量分析において重要な電子の背面散乱について検討した．電子の背面散乱係数の入射角度依存性，およびそのエネルギーの平均値および中央値について，モンテカルロ(MC)法を用いてBe, B, C, Al, Si, Cu, Zr, Ag, La, Auの10種類の元素...

Keyword:

AES, Auger electron spectroscopy, electron backscattering correction, and predictive formula for back scattering correction

Resource Type:

Article

Author:

田沼繁夫

Journal:

JOURNAL OF SURFACE ANALYSIS

Date Uploaded:

29/06/2023
Summary of ISO/TC 201 Standard: XX ISO 18118: 2004 — Surface chemical analysis — Auger electron spectroscopy and X-ray photoelectron spectroscopy —Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials

Description/Abstract:

ISO 18118 provides guidance on the measurement and use of experimentally determined relative sensitivity factors for the quantitative ana...

Keyword:

AES, Auger electron spectroscopy, ISO, International Organization for Standardization, X-ray photoelectron spectroscopy, XPS, quantitative surface analysis, and relative sensitivity factor

Resource Type:

Article

Author:

TANUMA, Shigeo

Journal:

Surface and Interface Analysis

Date Uploaded:

08/10/2020

Date Modified:

01/07/2021

オージェ電子分光法における背面散乱補正　I．広い分析条件で使用可能な電子の背面散乱補正式の開発

Summary of ISO/TC 201 Standard: XX ISO 18118: 2004 — Surface chemical analysis — Auger electron spectroscopy and X-ray photoelectron spectroscopy —Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials

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