Index Catalog // MDR

Description/Abstract:: We developed a 85°-high-angle inclined specimen holder which enabled the specimen surface to be irradiated by both electron and ion beams...
Keyword:: Auger Depth Profiling Analysis, Inclined Holder, GaAs/AlAs Superlattice, and Si/Ge multiple delta-doped layers
Material/Specimen:: GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Nagatomi, Takaharu, Kim, Kyung Joong, and Tanuma, Shigeo
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 08/09/2021
Date Modified:: 08/09/2021

Description/Abstract:: 試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析について検討を行った．分析時の試料保持温度を常温および-190℃として，それぞれの温度について電子線電流密度を３段階に変えてデプスプロファイルを取得した．イオン加速電圧は3kVである．また，測定したオー...
Keyword:: Auger Depth Profiling Analysis, Sample Cooling Method, and SiO2/Si
Material/Specimen:: SiO2:103nm/Si-Substrate
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 26/07/2021
Date Modified:: 26/07/2021

Description/Abstract:: 半球型電子分光器を搭載したオージェ電子分光装置では，傾斜ホルダーを用いると装置のジオメトリー特性との関係からイオン及び一次電子の入射角の自由度が大きくなる.特に試料回転の回転軸が一次電子の入射方向と一致する場合は，傾斜ホルダーの回転角によってイオン入射角を設定でき，電...
Keyword:: Auger Depth Profiling Analysis, Inclined Holder, GaAs/AlAs Superlattice, and Si/Ge multiple delta-doped layers
Material/Specimen:: GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Nagatomi, Takaharu, Kim, Kyung Joong, and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 14/06/2021
Date Modified:: 18/06/2021

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