The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphir...

We demonstrate x-ray diffraction based composition estimation of b-(AlxGa1-x)2O3 coherently grown on (010) b-Ga2O3. The relation between ...

Ten-period binary α-Al2O3/Ga2O3 superlattices were fabricated on r-plane sapphire substrates by molecular beam epitaxy. By systematic var...

We succeeded in fabricating 10-period coherent γ Al2O3/Ga2O3 superlattices (SLs) on MgAl2O4 substrates by molecular beam epitaxy. By vary...