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Takayoshi Oshima
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Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
Description/Abstract:
We have demonstrated selective-area growth and selective-area etching on SiO2-masked (−102) β-Ga2O3 substrates using a HCl-based halide-v...
Keyword:
(-102)
,
Ga2O3
,
selective area etching
, and
selective area growth
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
25/01/2025
Epitaxial relationship of NiO on (-102) β-Ga2O3
Description/Abstract:
We investigated the epitaxial relationship of an electron-beam-evaporated NiO film on a custom-ordered (-102) β-Ga2O3 substrate with a su...
Keyword:
Ga2O3
,
NiO
, and
epitaxial relationship
Resource Type:
Article
Author:
Takayoshi Oshima
and
Shinji Nakagomi
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
23/11/2024
Homoepitaxial growth of (-102) β-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
We demonstrated halide vapor phase epitaxy of β-Ga2O3 on a native (-102) substrate, which should be scalable and useful for the formation...
Keyword:
HVPE
and
β-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
and
Takayoshi Oshima
Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:
30/08/2024
Effect of temperature and HCl partial pressure on the selective area gas etching of (001) β-Ga2O3
Description/Abstract:
We investigated the anisotropic selective-area HCl-gas etching behavior for SiO2-masked (001) β-Ga2O3 and its dependence on the temperat...
Keyword:
etching
and
β-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
and
Takayoshi Oshima
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
20/08/2024
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
Description/Abstract:
GaN mesas were fabricated by sequential dry and wet etching of a +c-oriented GaN layer onto a lattice-matched AlInN layer for future appl...
Keyword:
AlInN
,
GaN
,
etching
, and
positive bevel edge termination
Resource Type:
Article
Author:
Takayoshi Oshima
,
Masataka Imura
, and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
02/08/2024
Plasma-free anisotropic selective-area etching of β-Ga <sub>2</sub> O <sub>3</sub> using forming gas under atmospheric pressure
Description/Abstract:
We demonstrate a facile and safe anisotropic gas etching technique for β-Ga2O3 under atmospheric pressure using forming gas, a H2/N2 gas ...
Keyword:
Ga2O3
,
anisotropic etching
,
forming gas
, and
plasma-free process
Resource Type:
Article
Author:
Takayoshi Oshima
,
Rie Togashi
, and
Yuichi Oshima
Journal:
Science and Technology of Advanced Materials
Date Uploaded:
31/07/2024
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
Description/Abstract:
We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded ...
Keyword:
Ga2O3
and
HCl gas etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
14/06/2024
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Description/Abstract:
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:
Ga2O3
,
HCl
, and
etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
28/05/2024
Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate
Description/Abstract:
We demonstrated selective-area growth of r-SnO2 on a SiO2-masked r-TiO2 (110) substrate. The heteroepitaxy on a window started with a Vol...
Keyword:
SnO2
and
selective area growth
Resource Type:
Article
Author:
Hitoshi Takane
,
Takayoshi Oshima
,
Katsuhisa Tanaka
, and
Kentaro Kaneko
Journal:
Applied Physics Express
Date Uploaded:
13/04/2024
Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications
Description/Abstract:
We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostr...
Keyword:
GeO2
,
SnO2
, and
TiO2
Resource Type:
Article
Author:
Hitoshi Takane
,
Takayoshi Oshima
,
Takayuki Harada
,
Kentaro Kaneko
, and
Katsuhisa Tanaka
Journal:
Applied Physics Express
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
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etching
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13
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Author
Takayoshi Oshima
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17
Yuichi Oshima
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Katsuaki Kawara
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Masataka Imura
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Japan Science and Technology Agency (JST), the Establishment of University Fellowships toward the Creation of Science and Technology Innovation
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1
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1
the Nippon Sheet Glass Foundation for Materials Science and Engineering
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Applied Physics Express
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