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Filtering by: Author Takayoshi Oshima Resource type Article

Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate

Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device appl...

Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precur...

In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...

Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy

α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire

Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates

Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas