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Tadakatsu Ohkubo
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Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Heating rate dependence of coercivity and microstructure of Fe–B–P–Cu nanocrystalline ...
Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepa...
Effect of Ca Addition on the Oxidation Resistance of Ni–Al Alloy
Oxide layer dependent orbital torque efficiency in ferromagnet/Cu/oxide heterostructures
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells
Large Tunneling Magnetoresistance in Perpendicularly Magnetized Magnetic Tunnel Juncti...
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implante...
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annea...
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
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atom probe tomography
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gallium nitride
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scanning transmission electron microscopy
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transmission electron microscopy
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InGaN
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Author
Jun Uzuhashi
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Tadakatsu Ohkubo
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Kazuhiro Hono
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Ashutosh Kumar
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Hideki Sakurai
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JOURNAL OF APPLIED PHYSICS
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APL Materials
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Journal of Alloys and Compounds
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METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
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