In the field of spintronics, there is a strong demand for barrier materials in magnetic tunnel junctions (MTJs) having high tunnel magnet...

The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but its reduction at finite temperature is a severe ...

スピネルバリアを用いた磁気トンネル接合Fe/MgAl2O4/Feの電圧特性を理論的に解析し、その結果をFe/MgO/Feの電圧特性と比較した。その結果、Fe/MgAl2O4/Feでは電極でのバンド折りたたみが起こるため、磁気抵抗比の電圧耐性がFe/MgO/Feよりも高くなる...

We study theoretically the anisotropic magneto-Peltier effect, which was recently demonstrated experimen-tally. A first-principles-based ...

We study interfacial magnetocrystalline anisotropies in various Fe/semiconductor heterostructures by means of first-principles calculatio...

We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-ba...

We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with...

磁気ヘテロ接合Fe/MgAl2O4の界面の磁気異方性について第一原理計算に基づいた解析を行った。垂直磁気異方性が得られることがわかり、その起源についても微視的な解析によって理解が得られた。また、より大きな垂直磁気異方性を得る手段として界面への重元素挿入の可能性についても検討した。

We theoretically study the tunnel magnetoresistance (TMR) effect in novel (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO3 bar...