Publication

Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions

MDR Open Deposited
Analytics

Downloadable Content

Download PDF
Download This Work (Zip)
Citations

We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000%, which is one order higher than that of the Ni-based one. The high TMR ratio is attributed to the interfacial resonance effect: the interfacial d–p antibonding states are formed close to the Fermi level in the majority-spin channel and these states in both interfaces resonate with each other. This differs essentially from the conventional coherent tunneling mechanism of high TMR ratios in Fe(Co)/MgO/Fe(Co)(001).

First published at
Creator
Keyword
Resource type
Publisher
Date published
  • 06/04/2020
Rights statement
License description
Journal
Manuscript type
  • Version of record (Published version)
Language
Funding reference
  • Funder identifier
    16H06332
    Funder name
    Japan Society for the Promotion of Science

Items

Thumbnail Title Date Uploaded Size Visibility Actions
PhysRevB.101.144404.pdf 1.11 MB MDR Open