Publication

Crucial role of interfacial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>s</mml:mi><mml:mtext>−</mml:mtext><mml:mi>d</mml:mi></mml:mrow></mml:math> exchange interaction in the temperature dependence of tunnel magnetoresistance

MDR Open Deposited
Analytics

Downloadable Content

Download PDF
Download This Work (Zip)
Citations

The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but its reduction at finite temperature is a severe drawback for applications. Here, we reveal a crucial determinant of the drawback, that is, the s−d exchange interaction between conduction s and localized d electrons at interfacial ferromagnetic layers. By calculating the temperature dependence of the TMR ratio in Fe/MgO/Fe(001), we show that the obtained TMR ratio significantly decreases with increasing temperature owing to the spin-flip scattering in the Δ1 state induced by the s−d exchange interaction. The material dependence of the coupling constant Jsd is also discussed on the basis of a nonempirical method.

First published at
Creator
Keyword
Resource type
Publisher
Date published
  • 03/11/2021
Rights statement
License description
Journal
Manuscript type
  • Version of record (Published version)
Language
Funding reference
  • Funder identifier
    JP17H06152
    Funder name
    Japan Society for the Promotion of Science
    Funder identifier
    JP20K14782
    Funder name
    Japan Society for the Promotion of Science
    Funder identifier
    JP20H02190
    Funder name
    Japan Society for the Promotion of Science
    Funder identifier
    JP16H06332
    Funder name
    Japan Society for the Promotion of Science

Items

Thumbnail Title Date Uploaded Size Visibility Actions
PhysRevB.104.L180403.pdf 826 KB MDR Open