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Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy
Description/Abstract:
We investigated the growth characteristics of homoepitaxial (001) b-Ga2O3 by plasma-assisted molecular beam epitaxy.
Keyword:
MBE
and
β-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Elaheh Ahmadi
,
Stephen Kaun
,
Feng Wu
, and
James S Speck
Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction
Description/Abstract:
We demonstrate x-ray diffraction based composition estimation of b-(AlxGa1-x)2O3 coherently grown on (010) b-Ga2O3. The relation between ...
Keyword:
atom probe
,
composition
, and
β-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Elaheh Ahmadi
,
Stefan C. Badescu
,
Feng Wu
, and
James S. Speck
Journal:
APPLIED PHYSICS EXPRESS
Date Uploaded:
11/01/2024
Date Modified:
24/01/2024
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β-Ga2O3
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MBE
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IOP Publishing
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Elaheh Ahmadi
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Feng Wu
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Yuichi Oshima
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APPLIED PHYSICS EXPRESS
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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