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1.
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Description/Abstract:
GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...
Keyword:
atom probe tomography
,
gallium nitride
, and
transmission electron microscopy
Resource Type:
ProceedingsArticle
Author:
Ryo Tanaka
,
Shinya Takashima
,
Katsunori Ueno
,
Masahiro Horita
,
Jun Suda
,
Jun Uzuhashi
,
Tadakatsu Ohkubo
, and
Masaharu Edo
Date Uploaded:
19/04/2024
2.
Development of Multi-scale Soft X-ray Diffraction Microscope for Observing Spin Textures
Description/Abstract:
軟X線回折顕微鏡を用いて実空間磁区観察を可能とする手法開発を行った。[Pt/Co/Ta]ヘテロ構造を用いて、解析を行わずにサブμm~mmまでの大きなダイナミックレンジの磁区観察が可能であることを示した。今後、磁気スキルミオン等の実空間・実時間ダイナミクス等へ適用する土台が整った。
Keyword:
Soft X-ray Diffraction Microscope
Resource Type:
ProceedingsArticle
Author:
Yuta Ishii
,
Yusuke Kozuka
,
Yuichi Yamasaki
,
Hironori Nakao
,
Yuta Ishii
,
Yusuke Kozuka
,
Yuichi Yamasaki
, and
Hironori Nakao
Date Uploaded:
19/03/2024
3.
Diamond Metal-Oxide-Semiconductor Field-effect Transistors on a Large-area Wafer
Description/Abstract:
Diamond-based devices are suitable for high-power, low power-loss, high-frequency, and high-temperature applications. Most of diamond-bas...
Keyword:
diamond
Resource Type:
ProceedingsArticle
Author:
Jiangwei Liu
,
Hirotaka Ohsato
,
Bo Da
, and
Yasuo Koide
Date Uploaded:
27/02/2024
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transmission electron microscopy
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