Publication
Diamond Metal-Oxide-Semiconductor Field-effect Transistors on a Large-area Wafer
MDR Open Deposited
Diamond-based devices are suitable for high-power, low power-loss, high-frequency, and high-temperature applications. Most of diamond-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated on small-area diamond wafers (3 × 3 mm2). In order to promote the diamond-based devices for future applications, it is necessary to investigate the electrical properties of them on the large-area wafers. Here, we fabricate 720 hydrogen-terminated diamond MOSFETs on a large-area wafer (8 × 8 mm2). Electrical properties of them are investigated and discussed.
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- 21/09/2023
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- Author's original (Preprint)
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