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Filtering by: Author Encarnación G. Víllora Rights Statement Sim In Copyright

Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

Description/Abstract:

The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...

Keyword:

HVPE, ε-Ga2O3, and κ-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Encarnación G. Víllora, Yoshitaka Matsushita, Satoshi Yamamoto, and Kiyoshi Shimamura

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

30/01/2024

Date Modified:

01/02/2024
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers

Description/Abstract:

ScClxとNH3との反応によるHVPEでScNを育成した。成長速度は、原料分圧の増大に伴って最初は増加するが、やがて減少に転じ、最大成長速度は5um/h程度であった。基板は種々試みたが、サファイア(10-12)と(10-10)を用いたときに単一配向のScN(100)および...

Keyword:

HVPE and ScN

Resource Type:

Article

Author:

Yuichi Oshima, Encarnación G. Víllora, and Kiyoshi Shimamura

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

30/01/2024

Date Modified:

01/02/2024
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates

Description/Abstract:

The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphir...

Keyword:

HVPE and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Encarnación G. Víllora, and Kiyoshi Shimamura

Journal:

APPLIED PHYSICS EXPRESS

Date Uploaded:

22/01/2024

Date Modified:

22/01/2024