Index Catalog // MDR

Description/Abstract:: We demonstrate that dislocation density in α-Ga2O3 epilayers is remarkably reduced via rapid growth at low temperatures by halide vapor p...
Keyword:: HVPE, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Hiroyuki Ando, and Takashi Shinohe
Journal:: Applied Physics Express
Date Uploaded:: 22/06/2024

Description/Abstract:: We improved the critical current (Ic) of the superconducting joint between the Bi2223 tapes by introducing the two-step sintering process...
Keyword:: Superconducting joint
Resource Type:: Article
Author:: Y Takeda, K Kobayashi, A Uchida, H Kitaguchi, G Nishijima, Y Yanagisawa, T Nakashima, S Yamade, S Kobayashi, T Kato, S Nakamura, T Motoki, and J Shimoyama
Journal:: Superconductor Science and Technology
Date Uploaded:: 05/04/2024

Description/Abstract:: Superconducting magnets used in applications such as magnetic resonance imaging (MRI) and nuclear magnetic resonance (NMR) require signif...
Keyword:: Superconducting joint
Resource Type:: Article
Author:: Y Takeda, H Maeda, K Ohki, and Y Yanagisawa
Journal:: Superconductor Science and Technology
Date Uploaded:: 05/04/2024

Description/Abstract:: The electrostatic potential distribution in materials and devices plays an important role in controlling the behaviors of charge carriers...
Keyword:: GaAs(110), Kelvin probe force microscopy, p-n junction, and qPlus sensor
Resource Type:: Article
Author:: Nobuyuki Ishida and Takaaki Mano
Journal:: Nanotechnology
Date Uploaded:: 03/04/2024

Description/Abstract:: The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphir...
Keyword:: HVPE and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, and Kiyoshi Shimamura
Journal:: APPLIED PHYSICS EXPRESS
Date Uploaded:: 22/01/2024
Date Modified:: 22/01/2024

Description/Abstract:: We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...
Keyword:: HVPE and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

Description/Abstract:: We investigated the growth characteristics of homoepitaxial (001) b-Ga2O3 by plasma-assisted molecular beam epitaxy.
Keyword:: MBE and β-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Elaheh Ahmadi, Stephen Kaun, Feng Wu, and James S Speck
Journal:: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

Description/Abstract:: The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...
Keyword:: ELO, HVPE, domain, ε-Ga2O3, and κ-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, and Takashi Shinohe
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

Description/Abstract:: We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...
Keyword:: ELO, HVPE, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

Description/Abstract:: We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...
Keyword:: ELO, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Katsuaki Kawara, Yuichi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: Applied Physics Express
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

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