The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but its reduction at finite temperature is a severe ...

半導体バリアCuInSe2、CuGaSe2を持つ磁気トンネル接合の伝導特性を第一原理計算によって調べた。その結果、両トンネル接合でΔ1状態の波動関数のコヒーレントトンネル現象が生じ、高いMR比が得られることが分かった。

We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-ba...

We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with...

We theoretically study the tunnel magnetoresistance (TMR) effect in novel (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO3 bar...