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Filtering by: Journal JOURNAL OF APPLIED PHYSICS Keyword HVPE Rights Statement Sim In Copyright

1. Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>

Description/Abstract:: We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 st...
Keyword:: ELO, HVPE, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Shingo Yagyu, and Takashi Shinohe
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

2. Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

Description/Abstract:: The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...
Keyword:: HVPE, ε-Ga2O3, and κ-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, Yoshitaka Matsushita, Satoshi Yamamoto, and Kiyoshi Shimamura
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

3. Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers

Description/Abstract:: ScClxとNH3との反応によるHVPEでScNを育成した。成長速度は、原料分圧の増大に伴って最初は増加するが、やがて減少に転じ、最大成長速度は5um/h程度であった。基板は種々試みたが、サファイア(10-12)と(10-10)を用いたときに単一配向のScN(100)および...
Keyword:: HVPE and ScN
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, and Kiyoshi Shimamura
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024