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Jun Uzuhashi
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transmission electron microscopy
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Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implante...
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atom probe tomography
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transmission electron microscopy
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gallium nitride
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InGaN
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dislocation
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Creative Commons BY Attribution 4.0 International
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Author
Jun Uzuhashi
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Tadakatsu Ohkubo
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Jun Suda
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Kazuhiro Hono
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Akira Uedono
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JOURNAL OF APPLIED PHYSICS
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