Index Catalog // MDR

1. Crucial role of interfacial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>s</mml:mi><mml:mtext>−</mml:mtext><mml:mi>d</mml:mi></mml:mrow></mml:math> exchange interaction in the temperature dependence of tunnel magnetoresistance

Description/Abstract:: The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but its reduction at finite temperature is a severe ...
Keyword:: Exchange interaction, Magnetic tunnel junction, Spintronics, and Tunnel magnetoresistance
Resource Type:: Article
Author:: Keisuke Masuda, Terumasa Tadano, and Yoshio Miura
Journal:: Physical Review B
Date Uploaded:: 11/04/2024

2. Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions

Description/Abstract:: スピネルバリアを用いた磁気トンネル接合Fe/MgAl2O4/Feの電圧特性を理論的に解析し、その結果をFe/MgO/Feの電圧特性と比較した。その結果、Fe/MgAl2O4/Feでは電極でのバンド折りたたみが起こるため、磁気抵抗比の電圧耐性がFe/MgO/Feよりも高くなる...
Keyword:: Magnetic tunnel junction, Spinel, Spintronics, and Tunnel magnetoresistance
Resource Type:: Article
Author:: Keisuke Masuda and Yoshio Miura
Journal:: Physical Review B
Date Uploaded:: 11/04/2024

3. First-principles study on magnetic tunneling junctions with semiconducting CuInSe2and CuGaSe2barriers

Description/Abstract:: 半導体バリアCuInSe2、CuGaSe2を持つ磁気トンネル接合の伝導特性を第一原理計算によって調べた。その結果、両トンネル接合でΔ1状態の波動関数のコヒーレントトンネル現象が生じ、高いMR比が得られることが分かった。
Keyword:: Magnetic tunnel junction, Spintronics, and Tunnel magnetoresistance
Resource Type:: Article
Author:: Keisuke Masuda and Yoshio Miura
Journal:: Japanese Journal of Applied Physics
Date Uploaded:: 11/04/2024

4. Giant interfacial perpendicular magnetic anisotropy in Fe/CuIn1−xGaxSe2 beyond Fe/MgO

Description/Abstract:: We study interfacial magnetocrystalline anisotropies in various Fe/semiconductor heterostructures by means of first-principles calculatio...
Keyword:: Magnetic anisotropy, Magnetic tunnel junction, and Spintronics
Resource Type:: Article
Author:: Keisuke Masuda, Shinya Kasai, Yoshio Miura, and Kazuhiro Hono
Journal:: Physical Review B
Date Uploaded:: 11/04/2024

5. Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions

Description/Abstract:: We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-ba...
Keyword:: Magnetic tunnel junction, Spintronics, and Tunnel magnetoresistance
Resource Type:: Article
Author:: Keisuke Masuda, Hiroyoshi Itoh, and Yoshio Miura
Journal:: Physical Review B
Date Uploaded:: 11/04/2024

6. Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study

Description/Abstract:: We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with...
Keyword:: Magnetic anisotropy, Magnetic tunnel junction, Spintronics, and Tunnel magnetoresistance
Resource Type:: Article
Author:: Keisuke Masuda, Hiroyoshi Itoh, Yoshiaki Sonobe, Hiroaki Sukegawa, Seiji Mitani, and Yoshio Miura
Journal:: Physical Review B
Date Uploaded:: 11/04/2024

7. Perpendicular magnetic anisotropy at the Fe/MgAl2O4 interface: Comparative first-principles study with Fe/MgO

Description/Abstract:: 磁気ヘテロ接合Fe/MgAl2O4の界面の磁気異方性について第一原理計算に基づいた解析を行った。垂直磁気異方性が得られることがわかり、その起源についても微視的な解析によって理解が得られた。また、より大きな垂直磁気異方性を得る手段として界面への重元素挿入の可能性についても検討した。
Keyword:: Magnetic anisotropy, Magnetic tunnel junction, and Spintronics
Resource Type:: Article
Author:: Keisuke Masuda and Yoshio Miura
Journal:: Physical Review B
Date Uploaded:: 11/04/2024

8. Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> barriers

Description/Abstract:: We theoretically study the tunnel magnetoresistance (TMR) effect in novel (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO3 bar...
Keyword:: Magnetic tunnel junction, Spintronics, and Tunnel magnetoresistance
Resource Type:: Article
Author:: Keisuke Masuda, Hiroyoshi Itoh, Yoshiaki Sonobe, Hiroaki Sukegawa, Seiji Mitani, and Yoshio Miura
Journal:: Physical Review B
Date Uploaded:: 11/04/2024
Date Modified:: 11/04/2024

9. Theoretical Study on Magnetic Tunneling Junctions with Semiconductor Barriers CuInSe<sub>2</sub> and CuGaSe<sub>2</sub> Including a Detailed Analysis of Band-Resolved Transmittances

Description/Abstract:: 2つの半導体バリアを持つ磁気トンネル接合（Fe/CuInSe2/Fe及びFe/CuGaSe2/Fe）の磁気伝導特性に関し、第一原理計算に基づく詳細な解析を行った。本論文ではその結果について議論を行った。
Keyword:: Magnetic tunnel junction, Spintronics, Tunnel magnetoresistance, and semiconductor
Resource Type:: Article
Author:: K. Masuda and Y. Miura
Journal:: Journal of the Magnetics Society of Japan
Date Uploaded:: 11/04/2024
Date Modified:: 11/04/2024

1. Crucial role of interfacial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>s</mml:mi><mml:mtext>−</mml:mtext><mml:mi>d</mml:mi></mml:mrow></mml:math> exchange interaction in the temperature dependence of tunnel magnetoresistance

2. Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions

3. First-principles study on magnetic tunneling junctions with semiconducting CuInSe2and CuGaSe2barriers

4. Giant interfacial perpendicular magnetic anisotropy in Fe/CuIn1−xGaxSe2 beyond Fe/MgO

5. Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions

6. Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study

7. Perpendicular magnetic anisotropy at the Fe/MgAl2O4 interface: Comparative first-principles study with Fe/MgO

8. Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> barriers

9. Theoretical Study on Magnetic Tunneling Junctions with Semiconductor Barriers CuInSe<sub>2</sub> and CuGaSe<sub>2</sub> Including a Detailed Analysis of Band-Resolved Transmittances

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1. Crucial role of interfacial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>s</mml:mi><mml:mtext>−</mml:mtext><mml:mi>d</mml:mi></mml:mrow></mml:math> exchange interaction in the temperature dependence of tunnel magnetoresistance

2. Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions

3. First-principles study on magnetic tunneling junctions with semiconducting CuInSe2and CuGaSe2barriers

4. Giant interfacial perpendicular magnetic anisotropy in Fe/CuIn1−xGaxSe2 beyond Fe/MgO

5. Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions

6. Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study

7. Perpendicular magnetic anisotropy at the Fe/MgAl2O4 interface: Comparative first-principles study with Fe/MgO

8. Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with &lt;mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"&gt;&lt;mml:msub&gt;&lt;mml:mi&gt;SrTiO&lt;/mml:mi&gt;&lt;mml:mn&gt;3&lt;/mml:mn&gt;&lt;/mml:msub&gt;&lt;/mml:math&gt; barriers

9. Theoretical Study on Magnetic Tunneling Junctions with Semiconductor Barriers CuInSe<sub>2</sub> and CuGaSe<sub>2</sub> Including a Detailed Analysis of Band-Resolved Transmittances

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8. Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> barriers