Index Catalog // MDR

Description/Abstract:: GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...
Keyword:: atom probe tomography, gallium nitride, and transmission electron microscopy
Resource Type:: ProceedingsArticle
Author:: Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, and Masaharu Edo
Date Uploaded:: 19/04/2024

Description/Abstract:: The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out usin...
Keyword:: InGaN, atom probe tomography, dislocation, pipe diffusion, and transmission electron microscopy
Resource Type:: Article
Author:: Yudai Yamaguchi, Yuya Kanitani, Yoshihiro Kudo, Jun Uzuhashi, Tadakatsu Ohkubo, Kazuhiro Hono, and Shigetaka Tomiya
Journal:: NANO LETTERS
Date Uploaded:: 04/10/2023
Date Modified:: 04/10/2023

Description/Abstract:: We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...
Keyword:: atom probe tomography, gallium nitride, and transmission electron microscopy
Resource Type:: Article
Author:: Emi Kano, Keita Kataoka, Jun Uzuhashi, Kenta Chokawa, Hideki Sakurai, Akira Uedono, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Ritsuo Otsuki, Koki Kobayashi, Yuta Itoh, Masahiro Nagao, Tadakatsu Ohkubo, Kazuhiro Hono, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 28/09/2023
Date Modified:: 28/09/2023

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