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Jun Uzuhashi
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gallium nitride
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Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pr...
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implante...
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annea...
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
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gallium nitride
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atom probe tomography
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scanning transmission electron microscopy
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activation
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Jun Uzuhashi
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Tadakatsu Ohkubo
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Hideki Sakurai
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JOURNAL OF APPLIED PHYSICS
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Proceedings of SPIE - The International Society for Optical Engineering
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