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1. Zero-magnetic-field operation of ordinary-Nernst-effect-based transverse thermoelectric module using embedded permanent magnets

Description/Abstract:: The ordinary Nernst effect enables large transverse thermoelectric conversion in semimetals but its operation requires the application of...
Keyword:: ordinary Nernst effect, permanent magnet, and transverse thermoelectric conversion
Resource Type:: Article
Author:: Masayuki Murata, Takamasa Hirai, Takeshi Seki, and Ken-ichi Uchida
Journal:: APPLIED PHYSICS LETTERS
Date Uploaded:: 15/05/2024

2. Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Description/Abstract:: パワー、およびUV応用を指向したα型酸化ガリウムの関連技術の現状と技術課題を俯瞰し、今後の展望を述べる。
Keyword:: epitaxy, power device, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima and Elaheh Ahmadi
Journal:: APPLIED PHYSICS LETTERS
Date Uploaded:: 29/01/2024
Date Modified:: 01/02/2024

3. Gate-modulated reflectance spectroscopy for detecting excitonic states in two-dimensional semiconductors

Description/Abstract:: We have developed a microspectroscopy technique for measuring gate-modulated reflectance to probe excitonic states in two-dimensional tra...
Keyword:: 2D materials, excitons, and modulation spectroscopy
Resource Type:: Article
Author:: Mengsong Xue, Kenji Watanabe, Takashi Taniguchi, and Ryo Kitaura
Journal:: APPLIED PHYSICS LETTERS
Date Uploaded:: 12/01/2024
Date Modified:: 15/01/2024

4. 631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/MgO/CoFe(001) junctions

Description/Abstract:: We demonstrate tunnel magnetoresistance (TMR) ratios of up to 631% at room temperature (RT) using CoFe/MgO/CoFe(001) epitaxial magnetic t...
Keyword:: MgO, TMR, epitaxial growth, magnetic tunnel junctions, spintronics, and tunnel magnetoresistance
Resource Type:: Article
Author:: Thomas Scheike, Zhenchao Wen, Hiroaki Sukegawa, and Seiji Mitani
Journal:: APPLIED PHYSICS LETTERS
Date Uploaded:: 05/01/2024

5. Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

Description/Abstract:: In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:: Ga2O3, HCl, and etching
Resource Type:: Article
Author:: Takayoshi Oshima and Yuichi Oshima
Journal:: APPLIED PHYSICS LETTERS
Date Uploaded:: 21/11/2023
Date Modified:: 27/11/2023