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Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
Description/Abstract:
The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphir...
Keyword:
HVPE
and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
, and
Kiyoshi Shimamura
Journal:
APPLIED PHYSICS EXPRESS
Date Uploaded:
22/01/2024
Date Modified:
22/01/2024
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
Description/Abstract:
We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...
Keyword:
HVPE
and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy
Description/Abstract:
We investigated the growth characteristics of homoepitaxial (001) b-Ga2O3 by plasma-assisted molecular beam epitaxy.
Keyword:
MBE
and
β-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Elaheh Ahmadi
,
Stephen Kaun
,
Feng Wu
, and
James S Speck
Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
Description/Abstract:
The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...
Keyword:
ELO
,
HVPE
,
domain
,
ε-Ga2O3
, and
κ-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
, and
Takashi Shinohe
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...
Keyword:
ELO
,
HVPE
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
Description/Abstract:
We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...
Keyword:
ELO
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Katsuaki Kawara
,
Yuichi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
Applied Physics Express
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Thin-film synthesis of metastable rocksalt MgSnN2 without epitaxial stabilization
Description/Abstract:
スパッタリング法で作製したウルツ鉱型MgSnN2薄膜をベルト型高圧装置を用いることで、高圧相である岩塩型構造に相転移させることに成功した。その際、相転移のエネルギー障壁についても導出することに成功した。
Keyword:
High-pressure heat treatment
,
Rocksalt MgSnN
, and
Wurtzite-to-rocksalt transition
Resource Type:
JournalArticle
Author:
Kaede Makiuchi
,
Fumio Kawamura
,
Junjun Jia
,
Hidenobu Murata
, and
Naoomi Yamada
Journal:
MATERIALS LETTERS
Date Uploaded:
18/01/2024
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
Description/Abstract:
β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...
Keyword:
Ga2O3
and
lithography
Resource Type:
Article
Author:
Takayoshi Oshima
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
17/01/2024
Date Modified:
24/01/2024
第3元素添加Nb3Sn線材のSn拡散と微細組織
Description/Abstract:
招待解説:元素添加は、Nb3Sn相そのものの物性向上やNb3Sn拡散反応過程での成長動力学に重要な役割を果たしている。本論文では、Snの化学ポテンシャル、拡散反応現象、核生成などの観点から、Nb3Sn層形成における第3元素添加の影響を詳しく解説した。
Keyword:
Nb3Sn reaction
,
chemical potential
,
element addition
, and
grain refinement
Resource Type:
JournalArticle
Author:
伴野 信哉
Journal:
低温工学
Date Uploaded:
17/01/2024
Manipulation of Spin Polarization in Boron-Substituted Graphene Nanoribbons
Description/Abstract:
The design of magnetic topological states due to spin polarization in an extended π carbon system has great potential in spintronics appl...
Keyword:
boron
,
graphene nanoribbons
, and
spin polarization
Resource Type:
Article
Author:
Kewei Sun
,
Orlando J. Silveira
,
Shohei Saito
,
Keisuke Sagisaka
,
Shigehiro Yamaguchi
,
Adam S. Foster
, and
Shigeki Kawai
Journal:
ACS Nano
Date Uploaded:
16/01/2024
Date Modified:
15/02/2024
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2
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2
National Institute for Materials Science
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International Center for Materials Nanoarchitectonics (WPI-MANA)
95
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69
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12
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12
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National Institute of Technology and Evaluation
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