ジャーナル論文 Rapid growth of a pit-free (011) β-Ga 2 O 3 homoepitaxial layer with very low residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy
ORCID SAMURAI ; ORCID SAMURAI
Rapid growth of a pit-free 011 -Ga2O3 homoepitaxial layer with very low residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy-1.pdf
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Yuichi Oshima, Takayoshi Oshima. Rapid growth of a pit-free (011) β-Ga 2 O 3 homoepitaxial layer with very low residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy. Science and Technology of Advanced Materials. 2026, 27 (1), 2751773. https://doi.org/10.1080/14686996.2026.2751773

説明:

(abstract)

In this study, we systematically investigated the effects of O2 and additional HCl on impurity incorporation and combined these experiments with thermodynamic analysis to identify the origin of residual Si contamination. We further clarified the mechanism responsible for pit formation and demonstrated that both issues can be effectively eliminated by removing additional HCl. As a result, pit-free (011) β-Ga2O3 homoepitaxial layers with residual Si concentrations below the SIMS detection limit were grown at a high growth rate of 13 μm/h, which is comparable to that for HCl-assisted HVPE, without sacrificing the low residual Cl concentration.

権利情報:

キーワード: Ga2O3, (011), HVPE

刊行年月日: 2026-12-31

出版者: Informa UK Limited

掲載誌:

  • Science and Technology of Advanced Materials (ISSN: 14686996) vol. 27 issue. 1 2751773

研究助成金:

  • New Energy and Industrial Technology Development Organization JPNP22007

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1080/14686996.2026.2751773

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更新時刻: 2026-11-10 11:15:58 +0900

MDRでの公開時刻: 2026-11-10 12:36:21 +0900

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