@article{oshima,
  title = {Rapid growth of a pit-free (011) β-Ga
                    <sub>2</sub>
                    O
                    <sub>3</sub>
                    homoepitaxial layer with very low residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy},
  author = {Yuichi Oshima, Takayoshi Oshima},
  publisher = {Informa UK Limited},
  year = {2026},
  keywords = {Ga2O3, (011), HVPE}
}