Detection limit of defect-induced strain in GaN evaluated by valence EELS and correlated structural analysis
- ジャーナル論文
- 著者
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;Shunsuke Yamashita (author) (この著者で検索)Sony Semiconductor Solutions CorporationJun Kikkawa (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials/Advanced Materials Characterization Field/Electron Microscopy Group
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;Susumu Kusanagi (author) (この著者で検索)Sony Semiconductor Solutions Corporation;Ichiro Nomachi (author) (この著者で検索)Sony Semiconductor Solutions Corporation;Ryoji Arai (author) (この著者で検索)Sony Semiconductor Solutions Corporation;Yuya Kanitani (author) (この著者で検索)Sony Semiconductor Solutions CorporationKoji Kimoto (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
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Yoshihiro Kudo (author) (この著者で検索)Sony Semiconductor Solutions Corporation - キーワード
- Limit of detection, Detection threshold, Physical analysis, Gallium nitride, Valence electron energy loss spectroscopy (VEELS), Low-loss spectrum
- 刊行年月日
- 2026-01-01
- 更新時刻
- 2026-04-30 12:01:11 +0900
High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS2/i-GaN Vertical Heterojunction
- ジャーナル論文
- 著者
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;Sushmitha Veeralingam (author) (この著者で検索)Liwen Sang (author) (この著者で検索)National Institute for Materials Science
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Hong Pang (author) (この著者で検索)National Institute for Materials Science
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Renzhi Ma (author) (この著者で検索)National Institute for Materials Science
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Sushmee Badhulika (author) (この著者で検索) - キーワード
- Gallium nitride, Molybdenum disulfide, Photodetector, Self-powered, Vertical heterojunction, Ultraviolet detection
- 刊行年月日
- 2023-12-20
- 更新時刻
- 2024-12-14 12:30:29 +0900
Continuous real-time O 1s core XPS spectra of H2O adsorption on +c Ga-face and m-plane surfaces of GaN
- データセット
- 著者
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SUMIYA, Masatomo (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, Gallium nitride, Surface oxidation, Oxidation, MOS structure, XPS, SPring-8
- 刊行年月日
- 2022-12-31
- 更新時刻
- 2024-01-05 22:11:14 +0900