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The wide bandgap semiconductor GaN has proven to be an excellent candidate for high-performance ultraviolet (UV) photodetectors owing to the direct bandgap, long lifetime, outstanding radiation hardness, and high thermal and chemical stability. To ultimately reduce the power consumption, self-powered operation is preferred. However, it is difficult to achieve a high responsivity when no external bias is applied for the reported self-powered Schottky, p–n junction, or hybrid GaN-based photodetectors. In this study, we report a UV photodetector with an ultrahigh photoresponsivity and fast response speed under zero-power consumption by integrating GaN with transition metal dichalcogenides (TMDs) MoS2 nanosheets through one-step hydrothermal and substrate compatible drop-casting method. Detailed characterization confirmed the formation of a 2D-MoS2/i-GaN vertical heterojunction with a few layers of hexagonal MoS2 nanosheets on a high-crystalline-quality GaN film. The photoresponsivity as high as 610 A/W and external quantum efficiency exceeding 2000% were achieved at the wavelength of 370 nm under zero external bias without sacrificing the response speed (∼ms). The specific detectivity was estimated to be 1.22 × 1014 Jones, and the UV/visible discrimination ratio was more than 2 orders of magnitude. The excellent performance of the 2D-MoS2/GaN-based vertical heterojunction UV photodetector could be attributed to the optimized heterointerface and the effective separation and transfer of photogenerated electron–hole pairs by the strong built-in electric field formed from the band alignment of the type-II heterojunction. This photodetector, with superior photoresponsivity at zero-power consumption, is promising for practical applications in areas such as sensing, imaging, and communication.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS2/i-GaN Vertical Heterojunction, copyright © 2023 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsphotonics.3c01250

キーワード: Gallium nitride, Molybdenum disulfide, Photodetector, Self-powered, Vertical heterojunction, Ultraviolet detection

刊行年月日: 2023-12-20

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Photonics (ISSN: 23304022) vol. 10 issue. 12 p. 4408-4416

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology
• Precursory Research for Embryonic Science and Technology JPMJPR19I7
• National Institute for Materials Science
• Indian Institute of Technology Hyderabad
• Japan Society for the Promotion of Science 23H01359
• Japan Society for the Promotion of Science 23KF0081

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5149

公開URL: https://doi.org/10.1021/acsphotonics.3c01250

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更新時刻: 2024-12-14 12:30:29 +0900

MDRでの公開時刻: 2024-12-14 12:30:29 +0900