20 件のレコードが見つかりました。
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
- 雑誌
- コレクション
- Research Highlights
- 著者
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
- 刊行年月日
- 2021-07-13
- 更新時刻
- 2023-12-26 21:38:08 +0900
First-principles lattice thermal conductivity calculation for GaN / F-43m (216) / materials id 830
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, GaN
- 刊行年月日
- 更新時刻
- 2026-01-24 12:32:02 +0900
Ab-initio phonon calculation for GaN / F-43m (216) / materials id 830
- データセット
- コレクション
- MDR phonon calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, GaN, F-43m (216)
- 刊行年月日
- 更新時刻
- 2023-05-14 19:05:25 +0900
Ab-initio phonon calculation for GaN / P6_3mc (186) / materials id 804
- データセット
- コレクション
- MDR phonon calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, GaN, P6_3mc (186)
- 刊行年月日
- 更新時刻
- 2023-05-14 19:03:39 +0900
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
- ジャーナル論文
- 著者
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Shunsuke Yamashita (author) (この著者で検索)
https://orcid.org/0000-0003-1702-1708
(unauthenticated)
;
;Sei Fukushima (author) (この著者で検索)Jun Kikkawa (author) (この著者で検索)National Institute for Materials Science (NIMS) Center for Basic Research on Materials
;
;Ryoji Arai (author) (この著者で検索)Yuya Kanitani (author) (この著者で検索)
https://orcid.org/0009-0002-2154-5571
(unauthenticated)
;
Koji Kimoto (author) (この著者で検索)National Institute for Materials Science (NIMS) Center for Basic Research on Materials
;
Yoshihiro Kudo (author) (この著者で検索) - キーワード
- defect, GaN, EELS, 4D-STEM, HAADF-STEM, ABF-STEM, HAXPES
- 刊行年月日
- 2024-03-01
- 更新時刻
- 2024-03-19 16:56:29 +0900
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- ジャーナル論文
- 著者
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Masahiro Hara (author) (この著者で検索)
https://orcid.org/0000-0001-9748-8011
(unauthenticated)
;
Toshihide Nabatame (author) (この著者で検索)
;
Yoshihiro Irokawa (author) (この著者で検索)
;
;Tomomi Sawada (author) (この著者で検索);Manami Miyamoto (author) (この著者で検索);Hiromi Miura (author) (この著者で検索);Tsunenobu Kimoto (author) (この著者で検索)Yasuo Koide (author) (この著者で検索)
- キーワード
- GaN
- 刊行年月日
- 2025-05-07
- 更新時刻
- 2025-05-08 12:30:16 +0900
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
- ジャーナル論文
- 著者
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Kongping Wu (author) (この著者で検索)
https://orcid.org/0000-0001-5672-7610
(unauthenticated)
;
;Renxiang Cheng (author) (この著者で検索);Leng Zhang (author) (この著者で検索);Wenxiu Wang (author) (この著者で検索);Fangzhen Li (author) (この著者で検索)Meiyong Liao (author) (この著者で検索)
- キーワード
- diamond, heat spreader, GaN, calculation
- 刊行年月日
- 2024-12-19
- 更新時刻
- 2025-04-22 08:30:20 +0900
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
- ジャーナル論文
- 著者
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Yoshihiro Irokawa (author) (この著者で検索)
;
Mamoru Usami (author) (この著者で検索)
https://orcid.org/0009-0002-3188-7380
(unauthenticated)
;
Jun Uzuhashi (author) (この著者で検索)
;
Tadakatsu Ohkubo (author) (この著者で検索)
;
Toshihide Nabatame (author) (この著者で検索)
;
Yasuo Koide (author) (この著者で検索)
- キーワード
- GaN
- 刊行年月日
- 2026-05-01
- 更新時刻
- 2026-05-13 10:14:20 +0900
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
- ジャーナル論文
- 著者
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色川 芳宏 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
大井 暁彦 (author) (この著者で検索)National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
;
生田目 俊秀 (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
;
小出 康夫 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
- キーワード
- GaN, hydrogen, Schottky barrier height
- 刊行年月日
- 2024-04-01
- 更新時刻
- 2024-04-10 16:30:21 +0900
Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam
- ジャーナル論文
- 著者
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Akira Uedono (author) (この著者で検索)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Shoji Ishibashi (author) (この著者で検索)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kohei Shima (author) (この著者で検索)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
;Shigefusa F. Chichibu (author) (この著者で検索)Kacper Sierakowski (author) (この著者で検索)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Makoto Oishi (author) (この著者で検索)
https://orcid.org/0000-0003-3402-4556
(unauthenticated)
;
Noriyuki Okada (author) (この著者で検索)
https://orcid.org/0009-0002-0090-5646
(unauthenticated)
;
Takuro Nagai (author) (この著者で検索)
;
Michal Bockowski (author) (この著者で検索)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- キーワード
- Mechanical polishing, GaN, Vacancy, Defect, Positron annihilation
- 刊行年月日
- 2026-04-12
- 更新時刻
- 2026-04-20 08:56:29 +0900