Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
- キーワード
- Ga2O3, (-102), selective area growth, selective area etching
- 刊行年月日
- 2024-01-22
- 更新時刻
- 2025-01-25 12:30:12 +0900
Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
- ジャーナル論文
- 著者
-
Yuichi Oshima (author) (この著者で検索)
;
Takashi Shinohe (author) (この著者で検索)
https://orcid.org/0009-0000-5559-1432
(unauthenticated)
- キーワード
- Ga2O3, dislocation, ELO, HVPE
- 刊行年月日
- 2025-12-31
- 更新時刻
- 2025-04-23 12:30:12 +0900